Recent advances in MOCVD growth of InxGa1-xAsyP1-y alloys
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Abstract
References (9)
Molecular beam epitaxy
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Kinetics of Silicon Growth under Low Hydrogen Pressure
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Growth of Ga0.47In0.53As-InP quantum wells by low pressure metalorganic chemical vapor deposition
1983 • 98 citations
1.2–1.6 μm GaxIn1−xAsyP1−y-InP DH lasers grown by LPMOCVD
1984 • 46 citations
Persistent photoconductivity and the quantized Hall effect in In0.53Ga0.47As/InP heterostructures
1984 • 39 citations
Very low threshold GaInAsP/InP double-heterostructure lasers grown by LP MOCVD
1983 • 33 citations
High-through-put, high-yield, and highly-reproducible (AlGa)As double-heterostructure laser wafers grown by molecular beam epitaxy
1981 • 26 citations
Low threshold ridge waveguide laser at 1.55 μm
1983 • 23 citations
Aging test of MOCVD shallow proton stripe GaInAsP/InP, DH laser diode emitting at 1.5 μm
1983 • 18 citations