Influence of arsenic adsorption layers on heterointerfaces in GaInAs/InP quantum well structures

Strain effects on GaxIn1−xAs/InP single quantum wells grown by organometallic vapor-phase epitaxy with 0≤x≤1

1990 • 113 citations

Interfacial properties of very thin GaInAs/InP quantum well structures grown by metalorganic vapor phase epitaxy

1992 • 69 citations

Arsenic dimers and multilayers on (001)GaAs surfaces in atmospheric pressure organometallic chemical vapor deposition

1992 • 68 citations

Gallium arsenide surface reconstructions during organometallic vapor-phase epitaxy

1992 • 63 citations

Mode of growth in LP-MOVPE deposition of GalnAs/lnP quantum wells

1990 • 55 citations

Single-monolayer quantum wells of GaInAs in InP grown by metalorganic vapor phase epitaxy

1990 • 38 citations

Photoluminescence study of carrier collection and recombination in thin GaInAs/InP single quantum wells

1989 • 36 citations

Influence of the gas switching sequence on the optical properties of ultrathin InGaAs/InP quantum wells

1991 • 30 citations

Analysis of growth conditions for the deposition of monolayers of GaInAs, GaAs and InAs in InP by LP-MOVPE

1992 • 12 citations

Temperature resolved photoluminescence investigations on InGaAs/InP MQWs

1991 • 11 citations

Lateral and vertical composition control in MOCVD-grown InP/GaInAs(P) structures

1991 • 10 citations