The photo-induced reaction of disilane with the Si(100) and Si(100)(2 × 1):D surfaces

Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfaces

1988 • 545 citations

Low‐temperature silicon epitaxy by ultrahigh vacuum/chemical vapor deposition

1986 • 500 citations

New Mechanism for Hydrogen Desorption from Covalent Surfaces: The Monohydride Phase on Si(100)

1989 • 357 citations

Adsorption of atomic hydrogen on clean cleaved silicon (111)

1983 • 349 citations

Vacuum ultraviolet absorption cross sections of SiH4, GeH4, Si2H6, and Si3H8

1986 • 299 citations

Structure of Si(100)H: Dependence on the H chemical potential

1991 • 299 citations

Evidence of pairing and its role in the recombinative desorption of hydrogen from the Si(100)-2×1 surface

1991 • 290 citations

Comparison of hydrogen desorption kinetics from Si(111)7 × 7 and Si(100)2 × 1

1991 • 279 citations

Role of bond-strain in the chemistry of hydrogen on the Si(100) surface

1992 • 257 citations

Desorption kinetics of hydrogen and deuterium from Si(111) 7×7 studied using laser-induced thermal desorption

1988 • 239 citations

Silicon hydride etch products from the reaction of atomic hydrogen with Si(100)

1989 • 232 citations

Adsorption kinetics of SiH4, Si2H6 and Si3H8 on the Si(111)-(7×7) surface

1988 • 212 citations

Absolute rate constants for the reaction of silylene with hydrogen, silane, and disilane

1988 • 196 citations

Role of hydrogen desorption in the chemical-vapor deposition of Si(100) epitaxial films using disilane

1991 • 195 citations

H-induced surface restructuring on Si(100): Formation of higher hydrides

1991 • 173 citations

Sticking and recombination of the SiH3 radical on hydrogenated amorphous silicon: The catalytic effect of diborane

1989 • 151 citations

Decomposition mechanisms of SiHx species on Si(100)-(2×1) for x=2, 3, and 4

1990 • 139 citations

Surface reaction probability of film-producing radicals in silane glow discharges

1990 • 111 citations

Interaction of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Si</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">H</mml:mi></mml:mrow><mml:mrow><mml:mn>6</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>with a Si(111)-77 surface

1989 • 108 citations

Adsorption and thermal dissociation of disilane (Si2H6) on Si(100)2×1

1990 • 91 citations

Thermal and electron-beam-induced reaction of disilane on Si(100)-(2×1)

1988 • 83 citations

Gas source silicon molecular beam epitaxy using disilane

1988 • 80 citations

Hydrogen elimination during the glow-discharge deposition of a-Si:H alloys

1981 • 77 citations

Direct kinetic studies of SiH3+SiH3, H, CCl4, SiD4, Si2H6, and C3H6 by tunable infrared diode laser spectroscopy

1991 • 71 citations

Metal-silicon bonded compounds. 12. Crystal and molecular structure of hexameric trimethylsilyllithium, [LiSiMe3]6

1980 • 67 citations

The adsorption of hydrogen, digermane, and disilane on Ge(111): a multiple internal reflection infrared spectroscopy study

1990 • 59 citations

Internal-state distributions of H2 desorbed from mono- and dihydride species on Si(100)

1992 • 55 citations

Model studies of dielectric thin film growth: Chemical vapor deposition of SiO2

1990 • 54 citations

Modulated molecular beam scattering of disilane on silicon

1990 • 52 citations

Mechanisms of disilane decomposition on Si(111)-7 × 7

1990 • 50 citations

Absolute rate constants for the gas-phase reactions of silylene with silane, disilane and the methylsilanes

1990 • 50 citations

Initial steps in the photochemical vapour deposition of amorphous silicon

1988 • 49 citations

The photo-induced reaction of digermane with the Si(100)(2 × 1):D surface

1993 • 46 citations

Plasma chemistry in disilane discharges

1992 • 45 citations

Site-selectivity in the reaction of silicon(111)-(7.times.7) with disilane

1990 • 42 citations

Modulated molecular-beam studies of the surface chemistry of silicon reaction with reactive gases

1987 • 41 citations

The adsorption of disilane on Si(111)-7 × 7 as studied by multiple internal reflection spectroscopy

1991 • 38 citations

Process characterization and mechanism for laser-induced chemical vapor deposition of a-Si : H from SiH4

1988 • 28 citations

Low Temperature Silicon Epitaxy Using Si2 H 6

1987 • 27 citations

Absolute rate constants for the reaction of silyl with nitric oxide, ethylene, propyne, and propylene, and the silyl recombination reaction

1990 • 27 citations

Plasma-enhanced chemical vapor deposition of i n s i t u doped epitaxial silicon at low temperatures. I. Arsenic doping

1989 • 22 citations

Quantum yield studies of disilane photodissociation at 193 nm by infrared diode laser spectroscopy

1989 • 21 citations

Plasma-enhanced chemical vapor deposition of i n s i t u doped epitaxial silicon at low temperatures. II. Boron doping

1989 • 19 citations

Low-temperature (600–650 °C) silicon epitaxy by excimer laser-assisted chemical vapor deposition

1989 • 17 citations

Defect microstructure in low temperature epitaxial silicon grown by RPCVD

1990 • 17 citations

Observation and characterization of near-UV transients formed in disilane photodissociation at 193 nm

1991 • 12 citations

Atomic layer growth of silicon by excimer laser induced cryogenic chemical vapor deposition

1990 • 12 citations

Epitaxial silicon growth conditions and kinetics in low-temperature ArF excimer laser photochemical-vapor deposition from disilane

1992 • 11 citations

Continuous Growth of Low‐Temperature Si Epitaxial Layer with Heavy Phosphorus and Boron Doping Using Photoepitaxy

1990 • 10 citations

Initial stage oxidation of the Ge:Si(111)‐(5×5) and Ge:Si(111)‐(7×7) surfaces

1992 • 4 citations

Disilane Adsorption on Ge(111): A Multiple Internal Reflection Infrared Spectroscopy Study

1990 • 4 citations