Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)

Polar heterojunction interfaces

1978 • 623 citations

Surface reactions of silicon with aluminum and with indium

1964 • 299 citations

LEED study of the stepped surface of vicinal Si (100)

1980 • 234 citations

Reduction of oxides on silicon by heating in a gallium molecular beam at 800 °Ca)

1980 • 128 citations

On the (110) orientation as the preferred orientation for the molecular beam epitaxial growth of GaAs on Ge, GaP on Si, and similar zincblende-on-diamond systems

1980 • 117 citations

Polar-on-nonpolar epitaxy: Sublattice ordering in the nucleation and growth of GaP on Si(211) surfaces

1982 • 116 citations

Contaminants on chemically etched silicon surfaces: LEED-Auger method

1970 • 92 citations

GaSb/AlSb multiquantum well structures: Molecular beam epitaxial growth and narrow-well photoluminescence

1983 • 92 citations

The influence of substrate surface conditions on the nucleation and growth of epitaxial silicon films

1969 • 90 citations

Some observations on Ge:GaAs(001) and GaAs:Ge(001) interfaces and films

1983 • 88 citations

Molecular beam epitaxy of Ge and Ga1−xAlxAs ultra thin film superlattices

1979 • 75 citations

The 2 × 1 structural reconstruction of Si{001}

1982 • 75 citations

Crystallography of SiP and SiAs Single Crystals and of SiP Precipitates in Si

1966 • 66 citations

Molecular beam epitaxy of AlSb

1982 • 55 citations

Partial dislocations, columnar growth, clustering, and pinhole formation in ultrathin film semiconductor heterostructures

1981 • 42 citations

Auger Electron Spectroscopy of Cleanup‐Related Contamination on Silicon Surfaces

1975 • 31 citations

Heteroepitaxial Growth of GaP on Silicon by Molecular Beam Epitaxy

1978 • 28 citations

Effects of Ga and Si ionization on the growth of Ga doped Si MBE

1981 • 24 citations

Heteroepitaxial Growth of GaP on a Si (100) Substrate by Molecular Beam Epitaxy

1982 • 23 citations