Back to search

Range parameters of heavy ions in amorphous targets at LSS-energies of 0.0006⩽ ϵ ⩽ 0.3

H. Oetzmann, A. Feuerstein, H. Grahmann, S. Kalbitzer
DOI: 10.1016/0375-9601(75)90697-0
Physics Letters A

Data up to Jan 2025

Published1975
Citations45
References4
Fields
PhysicsMaterials scienceChemistryComputer scienceAtomic physicsNuclear physicsCrystallography

Total Citations Per Year

Abstract

References (4)

Ion Implantation in Semiconductors

1969 • 1,410 citations

Computer simulation of atomic mixing during ion bombardment

1975 • 132 citations

The application of high resolution rutherford backscattering to the measurement of ion ranges in Si and Al

1975 • 31 citations

Range parameters of heavy ions at 10 and 35 keV in silicon

1975 • 28 citations

Cited By (0)

Loading...