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Carrier-density fluctuations and the IGFET mobility near threshold

Data up to Jan 2025

Published1975
Citations68
References30

Total Citations Per Year

Abstract

References (30)

Properties of Semiconductor Surface Inversion Layers in the Electric Quantum Limit

1967 • 1,889 citations

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1968 • 199 citations

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1973 • 160 citations

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1974 • 99 citations

Disorder-induced carrier localization in silicon surface inversion layers

1974 • 93 citations

Surface Potential Fluctuations Generated by Interface Charge Inhomogeneities in MOS Devices

1972 • 93 citations

Far-Infrared Cyclotron Resonance in the Inversion Layer of Silicon

1974 • 90 citations

Theory of the carrier-density fluctuations in an IGFET near threshold

1975 • 78 citations

Variable-range hopping in a silicon inversion layer

1974 • 72 citations

Substrate Bias Effects on Electron Mobility in Silicon Inversion Layers at Low Temperatures

1975 • 71 citations

Carrier mobilities at weakly inverted silicon surfaces

1974 • 70 citations

Subthreshold characteristics of insulated-gate field-effect transistors

1973 • 68 citations

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1974 • 49 citations

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1974 • 43 citations

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1973 • 36 citations

Two-dimensional electron-lattice scattering in thermally oxidized silicon surface-inversion layers

1974 • 36 citations

Relative importance of phonon scattering to carrier mobility in Si surface layer at room temperature

1973 • 30 citations

Effect of charge inhomogeneities on silicon surface mobility

1973 • 30 citations

Scattering mechanisms in inversion channels of MIS structures on silicon

1972 • 30 citations

Interface Imaging by Scanning Internal Photoemission

1974 • 25 citations

Ionised impurity scattering in silicon surface channels

1970 • 22 citations

Discussion of the surface-potential fluctuations caused by oxide-charge fluctuations

1974 • 21 citations

Semiconductor Surface Electrostatics

1971 • 17 citations

Peaked structure appearing in the field effect mobility of silicon MOS devices at temperatures above 20K

1974 • 15 citations

Temperature dependence of apparent threshold voltage of silicon MOS transistors at cryogenic temperatures

1968 • 14 citations

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