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Subthreshold characteristics of insulated-gate field-effect transistors

Data up to Jan 2025

Published1973
Citations68
References18

Total Citations Per Year

Abstract

References (18)

Physics of Semiconductor Devices

1970 • 4,230 citations

The Physics of Semiconductor Devices

2024 • 4,091 citations

Physics and technology of semiconductor devices

1967 • 2,850 citations

Semiconductor Surfaces

1966 • 801 citations

Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistors

1966 • 599 citations

Ion-implanted complementary MOS transistors in low-voltage circuits

1972 • 322 citations

<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type Surface Conductivity on<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi></mml:math>-Type Germanium

1953 • 132 citations

Theory and applications of field-effect transistors

1970 • 124 citations

Theory and applications of field-effect transistors

1971 • 109 citations

Low-level currents in insulated gate field effect transistors

1972 • 105 citations

Steady State Mathematical Theory for the Insulated Gate Field Effect Transistor

1973 • 57 citations

Physical limitations of MOS structures

1969 • 38 citations

Subthreshold drain leakage currents in MOS field-effect transistors

1972 • 37 citations

The distribution of mobile carriers in the pinch-off region of an insulated-gate field-effect transistor and its influence on device breakdown

1971 • 24 citations

Theoretical threshold voltages for MOS field effect transistors

1968 • 21 citations

Technology and performance of integrated complementary MOS circuits

1969 • 20 citations

Mathematical Simulation of the Effects of Ionizing Radiation on Semiconductors

1972 • 14 citations

Leakage currents of m.o.s. devices under surface-depletion conditions

1972 • 14 citations

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