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Heteroepitaxial Growth of GaP on Silicon by Molecular Beam Epitaxy

Shun‐ichi Gonda, Yuichi Matsushima, Seiji Mukai, Yunosuke Makita, Osamu Igarashi
DOI: 10.1143/jjap.17.1043
Japanese Journal of Applied Physics

Data up to Jan 2025

Published1978
Citations28
References1
Fields
Materials scienceGeologyOptoelectronicsNanotechnologyOceanography

Total Citations Per Year

Abstract

References (1)

Characterization and Substrate-Temperature Dependence of Crystalline State of GaAs Grown by Molecular Beam Epitaxy

1975 • 23 citations

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