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Fabrication of 15 nm wide trenches in Si by vacuum scanning tunneling microscope lithography of an organosilane self-assembled film and reactive ion etching

F. Keith Perkins, E. A. Dobisz, Susan L. Brandow, Jeffrey M. Calvert, John Kosakowski
DOI: 10.1063/1.116396
Applied Physics Letters

Data up to Jan 2025

Published1996
Citations57
References1
Fields
Materials scienceMedicineGeologyNanotechnologyOptoelectronicsMetallurgy

Total Citations Per Year

Abstract

References (1)

NANOLITHOGRAPHY: A Borderland between STM, EB, IB, and X-Ray Lithographies

1994 • 32 citations

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