Band Structure and High-Field Transport Properties of InP
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Abstract
References (12)
Band structure of indium antimonide
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Methods in Computational Physics
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Electroreflectance at a Semiconductor-Electrolyte Interface
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Microwave oscillations of current in III–V semiconductors
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Transport Properties of GaAs Obtained from Photoemission Measurements
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BAND STRUCTURE AND DIRECT TRANSITION ELECTROLUMINESCENCE IN THE In1−xGaxP ALLOYS
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High-Temperature Hall Coefficient in GaAs
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Experimental Evidence for Optical Population of the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>X</mml:mi></mml:math>Minima in GaAs
1967 • 60 citations
Location of the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>L</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>X</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>Minima in GaAs as Determined by Photoemission Studies
1968 • 56 citations
Improved photoemitters using GaAs and InGaAs
1968 • 41 citations
Preparation and Optical Properties of InAs1−xPx Alloys
1969 • 40 citations