BAND STRUCTURE AND DIRECT TRANSITION ELECTROLUMINESCENCE IN THE In1−xGaxP ALLOYS
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References (6)
Band Structures and Pseudopotential Form Factors for Fourteen Semiconductors of the Diamond and Zinc-blende Structures
1966 • 1,619 citations
Infrared Absorption and Electron Effective Mass in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type Gallium Arsenide
1959 • 421 citations
Exciton Absorption and Emission in InP
1964 • 205 citations
Band Structure of Gallium Phosphide from Optical Experiments at High Pressure
1964 • 186 citations
EFFICIENT VISIBLE ELECTROLUMINESCENCE AT 300°K FROM Ga1-xAlxAs p-n JUNCTIONS GROWN BY LIQUID-PHASE EPITAXY
1967 • 145 citations
Infrared Cyclotron Resonance in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type InAs and InP
1961 • 58 citations