Optimal surface and growth front of III–V semiconductors in molecular beam epitaxy: A study of kinetic processes via reflection high energy electron diffraction specular beam intensity measurements on GaAs(100)

P. Chen, J. Y. Kim, A. Madhukar, N. M. Cho

DOI: 10.1116/1.583533

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

Data up to Jan 2025

Published1986

Citations73

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Materials science Chemistry Physics Computer science Optics Optoelectronics Nanotechnology

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