Study of the two-dimensional–three-dimensional growth mode transition in metalorganic vapor phase epitaxy of GaInP/InP quantum-sized structures

Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfaces

1993 • 1,711 citations

Self-organized growth of regular nanometer-scale InAs dots on GaAs

1994 • 928 citations

Nature of strained InAs three-dimensional island formation and distribution on GaAs(100)

1994 • 238 citations

Eigenfunction-expansion method for solving the quantum-wire problem: Formulation

1991 • 148 citations

Nanoscale InP Islands for Quantum Box Structures by Hydride Vapor Phase Epitaxy

1993 • 131 citations

Influence of growth temperature on crystalline structure in Ga0.5In0.5P grown by organometallic vapor phase epitaxy

1988 • 98 citations

Formation of coherently strained self-assembled InP quantum islands on InGaP/GaAs(001)

1994 • 86 citations

Influence of arsenic adsorption layers on heterointerfaces in GaInAs/InP quantum well structures

1993 • 25 citations

Highly uniform InGaAs quantum dots ( ≈ nm) grown by MOVPE on GaAs

1994 • 11 citations

Photoluminescence of buried InGaAs grown on nanoscale InP islands by MOVPE

1994 • 3 citations