Comment on ‘‘Raman scattering with nanosecond resolution during pulsed laser annealing of silicon’’ [Appl. Phys. Lett. 4 1, 700 (1982)]

Optical absorption of silicon between 1.6 and 4.7 eV at elevated temperatures

1982 • 291 citations

Raman Measurement of Lattice Temperature during Pulsed Laser Heating of Silicon

1980 • 207 citations

Resonant Raman scattering in silicon

1975 • 200 citations

Raman scattering with nanosecond resolution during pulsed laser annealing of silicon

1982 • 29 citations

Time-reversal invariance and Raman measurements of phonon populations under nonequilibrium conditions

1982 • 29 citations