Optical study of extended-molecular-layer flat islands in lattice-matched<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">In</mml:mi></mml:mrow><mml:mrow><mml:mn>0.53</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>0.47</mml:mn></mml:mrow…

Band structure of indium antimonide

1957 • 3,604 citations

Superlattice band structure in the envelope-function approximation

1981 • 1,300 citations

Linewidth dependence of radiative exciton lifetimes in quantum wells

1987 • 1,076 citations

Determination of Kilovolt Electron Energy Dissipation vs Penetration Distance in Solid Materials

1971 • 786 citations

Cathodoluminescence Microscopy of Inorganic Solids

1990 • 556 citations

Band nonparabolicity effects in semiconductor quantum wells

1987 • 343 citations

One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam Epitaxy

1985 • 236 citations

Does luminescence show semiconductor interfaces to be atomically smooth?

1990 • 177 citations

Relationship between the conduction-band discontinuities and band-gap differences of InGaAsP/InP heterojunctions

1984 • 167 citations

Cathodoluminescence atomic scale images of monolayer islands at GaAs/GaAlAs interfaces

1987 • 163 citations

Simple calculations of confinement states in a quantum well

1985 • 155 citations

Effect of Well Size Fluctuation on Photoluminescence Spectrum of AlAs–GaAs Superlattices

1983 • 151 citations

Observation of one-monolayer size fluctuations in a GaAs/GaAlAs superlattice

1984 • 145 citations

Structural changes of the interface, enhanced interface incorporation of acceptors, and luminescence efficiency degradation in GaAs quantum wells grown by molecular beam epitaxy upon growth interruption

1986 • 125 citations

Exciton binding energy in a quantum well with inclusion of valence-band coupling and nonparabolicity

1987 • 123 citations

Photoluminescence studies of the effects of interruption during the growth of single GaAs/Al0.37Ga0.63As quantum wells

1986 • 85 citations

Photoluminescence study of interface defects in high-quality GaAs-GaAlAs superlattices

1986 • 73 citations

Determination of interfacial quality of GaAs-GaAlAs multi-quantum well structures using photoluminescence spectroscopy

1985 • 66 citations

Interface disorder in GaAs/AlGaAs quantum wells grown by molecular beam epitaxy at high substrate temperature

1985 • 65 citations

Observation of kinetically controlled monolayer step height distribution at normal and inverted interfaces in ultrathin GaAs/AlxGa1−xAs quantum wells

1986 • 63 citations

Photoluminescence and absorption linewidth of extremely flat GaAs-AlAs quantum wells prepared by molecular beam Epitaxy including interrupted deposition for atomic layer smoothing

1986 • 61 citations

Simulation Studies of a Composition Analysis by Thickness-Fringe (CAT) in an Electron Microscope Image of GaAs/Al_xGa_1-xAs Superstructure

1986 • 56 citations

Excitonic transitions in lattice-matched<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mfrac><mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">In</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mi mathvariant="normal">As</mml:mi></…

1988 • 54 citations

Excitonic lifetimes in thin<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">In</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="normal">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi mathvariant="normal">−</mml:mi><…

1989 • 50 citations

Atomic steps in thin GaInAs/lnP quantum-well structures grown by organometallic vapor phase epitaxy

1988 • 46 citations

Optical investigation of atomic steps in ultrathin InGaAs/InP quantum wells grown by vapor levitation epitaxy

1989 • 41 citations

Determination of the microscopic quality of InGaAs-InAlAs interfaces by photoluminescence—Role of interrupted molecular beam epitaxial growth

1986 • 40 citations

Atomic abruptness in InGaAsP/InP quantum well heterointerfaces grown by low-pressure organometallic vapor phase epitaxy

1988 • 34 citations

Linewidth Dependence of Radiative Exciton Lifetimes in Quantum Wells

1988 • 31 citations

Interface roughness and charge carrier recombination lifetimes in GaInAs/InP quantum wells grown by LP-MOVPE

1988 • 28 citations

Exciton binding energies in GaInAs/InP quantum wells determined by thermally modulated photoluminescence

1988 • 25 citations

Direct imaging of the columnar structure of GaAs quantum wells

1988 • 23 citations

Cathodoluminescence study of substrate offset effects on interface step structures of quantum wells

1989 • 21 citations

Direct observation of extended monolayer flat islands at metalorganic vapor phase epitaxy grown Al0.5Ga0.5As-GaAs single quantum well interfaces

1988 • 17 citations

Well width dependence of the carrier life time in InGaAs/InP quantum wells

1989 • 16 citations

High quality InGaAsPInP for multiple quantum well laser diodes grown by low-pressure OMVPE

1988 • 16 citations

Direct imaging and theoretical modelling of the atomistic morphological and chemical structure of semiconductor heterointerfaces

1990 • 16 citations

Reduction of well width fluctuation in AlGaAs-GaAs single quantum well by growth interruption during molecular beam epitaxy

1986 • 15 citations

Electron energy states and miniband parameters in a class of non-uniform quantum well and superlattice structures

1985 • 12 citations

Electron-hole transition energies and atomic steps at the interfaces of thin InGaAs/InP quantum wells

1990 • 12 citations

Interface disorder in GaAs/AlGaAs quantum wells grown by MBE

1986 • 11 citations

High-quality InGaAsP/InP single-quantum wells and superlattice structures grown by low-pressure metalorganic vapor phase epitaxy

1988 • 11 citations

Photoconductivity in -superlattices: Subband-continuum transitions and band offsets

1989 • 10 citations

Sharp interfaces in GaInAsP/InP single quantum wells grown by MOVPE

1988 • 8 citations