Observation of dislocation stresses in InP using polarization-resolved photoluminescence

Material parameters of In1−xGaxAsyP1−y and related binaries

1982 • 769 citations

Controversy of critical layer thickness for InGaAs/GaAs strained-layer epitaxy

1988 • 164 citations

The displacement and stress fields of a general dislocation close to a free surface of an isotropic solid

1981 • 84 citations

Polarization of the output of InGaAsP semiconductor diode lasers

1989 • 31 citations

Bonding stress measurements from the degree of polarization of facet emission of AlGaAs superluminescent diodes

1991 • 29 citations

Dislocation Walls Consisting of Double Arrays in White Tin Single Crystals

1979 • 21 citations

Identification of dislocation etch pits in n-type GaAs by NIR transmission microscopy

1991 • 2 citations