Angular resolved photoemission from surface states on reconstructed (100) GaAs surfaces

Molecular beam epitaxy

1975 • 1,191 citations

Surface reconstruction on semiconductors

1976 • 320 citations

Composition and structure of differently prepared GaAs(100) surfaces studied by LEED and AES

1978 • 313 citations

Structure and stoichiometry of {100} GaAs surfaces during molecular beam epitaxy

1978 • 187 citations

Nonlocal pseudopotentials for Ge and GaAs

1974 • 168 citations

(110) surface states of GaAs: Sensitivity of electronic structure to surface structure

1978 • 161 citations

Influence of volume dope on Fermi level position at gallium arsenide surfaces

1967 • 144 citations

Electronic surface states on clean and oxygen‐exposed GaAs surfaces

1976 • 124 citations

Measurement of the Angle of Dangling-Bond Photoemission from Cleaved Silicon

1974 • 100 citations

GaAs(100): Its spectrum, effective charge, and reconstruction patterns

1976 • 71 citations

Angular resolved ups of surface states on GaAs(1̄1̄1̄) prepared by molecular beam epitaxy

1979 • 63 citations

Adsorption states and Ga depletion during oxygen adsorption on clean polar GaAs surfaces

1979 • 60 citations

Surface states and photoemission in 111-Si faces

1977 • 2 citations