Defect calculations in semiconductors Theoretical principles as illustrated by current calculations

Transition metals in silicon

1983 • 1,176 citations

Theory of Defects in Solids

2001 • 854 citations

Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors

1977 • 678 citations

The electronic structure of impurities and other point defects in semiconductors

1978 • 672 citations

Higher Donor Excited States for Prolate-Spheroid Conduction Bands: A Reevaluation of Silicon and Germanium

1969 • 591 citations

Computer Simulation of Solids

1982 • 568 citations

Electron spin resonance in the study of diamond

1978 • 550 citations

Shallow Impurity States in Silicon and Germanium

1957 • 499 citations

Non-radiative transitions in semiconductors

1981 • 342 citations

Deep levels in semiconductors

1980 • 266 citations

Impurity Doping Processes in Silicon

1981 • 260 citations

A new mechanism for interstistitial migration

1972 • 247 citations

Colour centres in irradiated diamonds. I

1957 • 237 citations

Ionicity in solids

1983 • 215 citations

Criterion for the Occurrence of Luminescence

1955 • 189 citations

On the luminescence and absence of luminescence of F centers

1975 • 138 citations

Interpretation of acceptor spectra in semiconductors

1978 • 133 citations

Application of the Quantum-Defect Method to Optical Transitions Involving Deep Effective-Mass-Like Impurities in Semiconductors

1969 • 131 citations

Recombination-enhanced migration of interstitial aluminum in silicon

1979 • 125 citations

Magneto-Optical Studies of Excited States of the Cl Donor in CdS

1970 • 106 citations

Interstitial muons and hydrogen in diamond and silicon

1984 • 103 citations

Polarons Bound in a Coulomb Potential. I. Ground State

1969 • 95 citations

Are impurities the cause of ’’self’’-compensation in large-band-gap semiconductors?

1980 • 95 citations

Electronic structure of transition-atom impurities in semiconductors: Substitutional<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>3</mml:mn><mml:mi>d</mml:mi></mml:math>impurities in silicon

1983 • 94 citations

Theory of substitutional and interstitial<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>3</mml:mn><mml:mi>d</mml:mi></mml:math>impurities in silicon

1982 • 91 citations

Identification of the Isolated Ga Vacancy in Electron-Irradiated GaP through EPR

1978 • 74 citations

Recombination-enhanced defect reactions strong new evidence for an old concept in semiconductors

1977 • 71 citations

Relaxation about the vacancy in diamond

1978 • 71 citations

Interstitial muons and hydrogen in crystalline silicon

1983 • 69 citations

Theory of Enhanced Migration of Interstitial Aluminum in Silicon

1983 • 66 citations

Quasiband crystal-field method for calculating the electronic structure of localized defects in solids

1982 • 66 citations

Electron paramagnetic resonance of electron-irradiated GaP

1981 • 65 citations

Charge-state-controlled structural relaxation of the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>EL</mml:mi><mml:mi /><mml:mn>2</mml:mn></mml:math>center in GaAs

1983 • 62 citations

Helium diffusion and solubility in obsidians and basaltic glass in the range 200–300°C

1980 • 60 citations

The structure and motion of the self-interstitial in diamond

1978 • 59 citations

Theory of defects and defect processes

1979 • 47 citations

II. Non-radiative processes in insulators and semiconductors

1977 • 47 citations

Metastable<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>M</mml:mi></mml:math>center in InP: Defect-charge-state—controlled structural relaxation

1983 • 43 citations

Non-radiative de-excitation of deep centres

1978 • 42 citations

Chemical trends of deep impurity levels in covalent semiconductors

2007 • 42 citations

New aspects of the oxygen donor in gallium phosphide

1983 • 32 citations

Applicability of the local-density theory to interstitial transition-metal impurities in silicon

1983 • 30 citations

Credibility of different calculational schemes for defects in semiconductors: their power and their limits

1984 • 28 citations

Evidence for correlation effects in the hyperfine structure of the negative vacancy in silicon

1983 • 26 citations

Defect energies in ZnSe

1982 • 26 citations

Phonon coupling and photoionisation cross-sections in semiconductors

1979 • 26 citations

Need for a New Metastable State of GaP:<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msup><mml:mrow><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mrow><mml:mo>−</mml:mo></mml:mrow></mml:msup></mml:mrow></mml:math>in the Dean-Henry-Kukimoto Model of GaP: O

1981 • 24 citations

Nature and diffusion of the self-interstitial in silicon

1983 • 23 citations

Defect Reactions in GaP: (Zn,O)

1981 • 17 citations

The energy of formation of alkali metal ion interstitials in zinc selenide

1981 • 13 citations

Electronic structure of the divacancy in silicon

1983 • 13 citations

Self-consistent calculations for shallow defects in semiconductors: I

1975 • 12 citations

Localized states in ionic crystals

1985 • 9 citations

Charge state stability: “Negative-U” centres in ionic crystals

1983 • 9 citations

Electronic structure of oxygen in gallium phosphide

1983 • 6 citations

Correlated DLTS and EPR measurements of defects in As-grown and electron irradiated p-type GaP

1983 • 6 citations

Reply to "Electronic structure of oxygen in gallium phosphide"

1983 • 6 citations

Carrier-density dependence of dynamic multiphonon nonradiative recombination through deep levels in semiconductors

1983 • 3 citations

Comments on: “Solubility of noble gases in serpentine: Implications for meteoritic noble gas abundances” by A. Zaikowski and O.A.Schaeffer

1980 • 2 citations