Recombination-enhanced defect reactions strong new evidence for an old concept in semiconductors

Unimolecular reactions

1975 • 1,997 citations

Radiation effects in semiconductors

1971 • 817 citations

Fast capacitance transient appartus: Application to ZnO and O centers in GaP p-n junctions

1974 • 602 citations

Unimolecular reactions

1973 • 584 citations

Radiation Damage and Defects in Semiconductors

1973 • 379 citations

Non-radiative transitions in semiconductors

1981 • 342 citations

Theory of recombination-enhanced defect reactions in semiconductors

1975 • 298 citations

Observation of Recombination-Enhanced Defect Reactions in Semiconductors

1974 • 287 citations

Defects in irradiated silicon: EPR and electron-nuclear double resonance of interstitial boron

1975 • 252 citations

Nonradiative Recombination at Deep Levels in GaAs and GaP by Lattice-Relaxation Multiphonon Emission

1975 • 230 citations

Simple Theoretical Estimates of the Enthalpy of Antistructure Pair Formation and Virtual‐Enthalpies of Isolated Antisite Defects in Zinc‐Blende and Wurtzite Type Semiconductors

1975 • 216 citations

Optical Properties of Cd-O and Zn-O Complexes in GaP

1968 • 203 citations

Photoacoustic spectroscopy of solids

1975 • 193 citations

Light-emitting diodes

1976 • 180 citations

Rapid degradation phenomenon in heterojunction GaAlAs–GaAs lasers

1974 • 170 citations

Dislocation climb model in compound semiconductors with zinc blende structure

1976 • 168 citations

ESR detection of antisite lattice defects in GaP, CdSiP2, and ZnGeP2

1976 • 161 citations

Photoluminescence of Radiation Defects in Ion-Implanted<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>6</mml:mn><mml:mi>H</mml:mi></mml:math>SiC

1972 • 149 citations

Spectral distribution of photoionization cross sections by photoconductivity measurements

1975 • 143 citations

Recombination-enhanced annealing of the E1 and E2 defect levels in 1-MeV-electron–irradiated n-GaAs

1976 • 130 citations

Defects in irradiated silicon: EPR of the tin-vacancy pair

1975 • 127 citations

Observation of athermal defect annealing in GaP

1976 • 126 citations

Annealing and Arsenic Overpressure Experiments on Defects in Gallium Arsenide

1966 • 121 citations

Defect structure of degraded heterojunction GaAlAs−GaAs lasers

1975 • 105 citations

Temperature-Dependent Radiative Recombination Mechanisms in GaP (Zn,O) and GaP (Cd,O)

1968 • 102 citations

Isoelectronic traps in semiconductors (experimental)

1973 • 99 citations

F centre production in alkali halides by radiationless electron hole recombination

1965 • 98 citations

Permanent degradation of GaAs tunnel diodes

1964 • 89 citations

Photocapacitance effects of deep traps in epitaxial GaAs

1976 • 72 citations

Degradation characteristics of cw optically pumped AlxGa1−xAs heterostructure lasers

1973 • 65 citations

Dislocations in vapor phase epitaxial GaP

1974 • 59 citations

Defect structure induced during forward-bias degradation of GaP green-light-emitting diodes

1976 • 54 citations

Injection-stimulated dislocation motion in semiconductors

1976 • 51 citations

Inequivalent Sites and Multiple Donor and Acceptor Levels in SiC Polytypes

1962 • 46 citations

The behaviour of boron impurities in n-type gallium arsenide and gallium phosphide

1974 • 43 citations

DEPENDENCE OF RADIATIVE EFFICIENCY IN GaP DIODES ON HEAT TREATMENT

1968 • 42 citations

Photoluminescence Studies in Irradiated Si-Doped Gallium Arsenide

1973 • 41 citations

Deep-level changes associated with the degradation of gallium phosphide red-light-emitting diodes

1976 • 38 citations

Efficient Luminescence Centers in H- and D-Implanted<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>6</mml:mn><mml:mi>H</mml:mi></mml:math>SiC

1973 • 37 citations

Luminescence in Intrinsic and Annealed Electron-Irradiated GaAs:Cd

1969 • 36 citations

Reduced degradation in InxGa1−xAs electroluminescent diodes

1975 • 34 citations

Direct Evidence for Generation of Defect Centers during Forward-Bias Degradation of GaAs1−xPxElectroluminescent Diodes

1971 • 31 citations

Microscopic Mechanisms of Growth of Dark Line Defects in Double Heterostructure Lasers

1975 • 31 citations

Magneto-optical measurements on H-implanted<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>6</mml:mn><mml:mi>H</mml:mi></mml:math>SiC

1974 • 31 citations

Interdependence of strain, precipitation, and dislocation formation in epitaxial Se-doped GaAs

1974 • 31 citations

Isotope shift at substitutional Cu in ZnO

1976 • 29 citations

Rapid Degradation in Double-Heterostructure Lasers. II. Semiquantitative Analyses on the Propagation of Dark Line Defects

1975 • 27 citations

Photoluminescence of H- and D-implanted<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>4</mml:mn><mml:mi>H</mml:mi></mml:math>SiC

1974 • 24 citations

The optical properties of Be, Mg and Zn-diffused gallium phosphide

1971 • 24 citations

Degradation of bulk luminescence in GaP : Zn,O induced by laser excitation

1976 • 23 citations

Electroluminescence in semiconductors

1976 • 17 citations

Magneto-Optical Measurements on H-Implanted 6H SiC

1974 • 12 citations

Kinetics of Zn-O Complex Formation in GaP Crystal

1972 • 5 citations