Infra-red Absorption in Gallium Phosphide-Gallium Arsenide Alloys I. Absorption in n-type Material

Shallow Impurity States in Silicon and Germanium

1957 • 499 citations

Band Structure and Electron Transport of GaAs

1960 • 459 citations

Band Structure and Transport Properties of Some 3–5 Compounds

1961 • 438 citations

Infrared Absorption and Electron Effective Mass in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type Gallium Arsenide

1959 • 421 citations

Optical absorption and recombination radiation in semiconductors due to transitions between hydrogen-like acceptor impurity levels and the conduction band

1960 • 325 citations

Band Structure of the Intermetallic Semiconductors from Pressure Experiments

1961 • 258 citations

Infra-red Absorption in Semiconductors

1956 • 224 citations

Optical absorption in n-type gallium phosphide

1959 • 166 citations

Fundamental Reflectivity of GaAs at Low Temperature

1962 • 62 citations

Injection electroluminescence at p-n junctions in zinc-doped gallium phosphide

1962 • 44 citations