Effect of annealing ambient on performance and reliability of low pressure chemical vapor deposited oxides for thin film transistors

Navakanta Bhat, A. Wang, Krishna C. Saraswat

DOI: 10.1557/proc-424-287

MRS Proceedings

Data up to Jan 2025

Published1996

Citations2

References1

Fields

Materials science Chemistry Physics Optoelectronics Composite material Nanotechnology

Total Citations Per Year

Abstract

References (1)

Correlation of trap generation to charge-to-breakdown (Q/sub bd/): a physical-damage model of dielectric breakdown

1994 • 102 citations

Cited By (0)

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