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An In0.15Ga0.85As/GaAs pseudomorphic single quantum well HEMT

J.J. Rosenberg, Mourad Benlamri, P. D. Kirchner, J. M. Woodall, G. D. Pettit
DOI: 10.1109/edl.1985.26205
IEEE Electron Device Letters

Data up to Jan 2025

Published1985
Citations195
References3
Fields
PhysicsEngineeringElectrical engineeringQuantum mechanics

Total Citations Per Year

Abstract

References (3)

Fermi-Level Pinning by Misfit Dislocations at GaAs Interfaces

1983 • 134 citations

On the collapse of drain I-V characteristics in modulation-doped FET's at cryogenic temperatures

1984 • 110 citations

Misfit Dislocations in Bicrystals of Epitaxially Grown Silicon on Boron-Doped Silicon Substrates

1969 • 53 citations

Cited By (0)

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