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Spectral hole-burning and nonlinear-gain decrease in a band-to-level transition semiconductor laser

Data up to Jan 2025

Published1973
Citations51
References14

Total Citations Per Year

Abstract

References (14)

Theory of an Optical Maser

1964 • 1,681 citations

High-Field Transport in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>- Type GaAs

1968 • 307 citations

Quantum-Theoretical Comparison of Nonlinear Susceptibilities in Parametric Media, Lasers, and Raman Lasers

1964 • 282 citations

The Non-linear Constitutive Relation in Solids at Optical Frequencies

1963 • 130 citations

Gallium arsenide lasers

1969 • 109 citations

GaAs–AlxGa1−xAs Double Heterostructure Lasers—Effect of Doping on Lasing Characteristics of GaAs

1972 • 98 citations

Properties of Spontaneous and Stimulated Emission in GaAs Junction Lasers. I. Densities of States in the Active Regions

1970 • 85 citations

Properties of Spontaneous and Stimulated Emission in GaAs Junction Lasers. II. Temperature Dependence of Threshold Current and Excitation Dependence of Superradiance Spectra

1970 • 56 citations

Saturation behavior of the spontaneous emission from double-heterostructure junction lasers operating high above threshold

1973 • 42 citations

Study of electron energy relaxation times in GaAs and InP

1973 • 34 citations

The Current Dependence of the Intensity of Spontaneous Emission of GaAs Injection Lasers to Full Operating Power

1971 • 28 citations

Variation of spontaneous emission with current in GaAs homostructure and double-heterostructure injection lasers

1973 • 23 citations

Electron mobility in heavily doped gallium arsenide

1973 • 17 citations

Decrease in Spontaneous Emission at the Onset of Lasing in Semiconductors

1971 • 9 citations

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Spectral hole-burning and nonlinear-gain decrease in a band-to-level transition… (1973) – IEEE Journal of Quantum Electronics | Metascience Observatory Explorer