Lattice relaxation of InAs heteroepitaxy on GaAs

Defects in epitaxial multilayers I. Misfit dislocations

1974 • 3,067 citations

Determination of the lattice constant of epitaxial layers of III-V compounds

1978 • 489 citations

Elastic strain and misfit dislocation density in Si0.92Ge0.08 films on silicon substrates

1977 • 164 citations

Nucleation and strain relaxation at the InAs/GaAs(100) heterojunction

1983 • 148 citations

Analytical Techniques for Thin Films

1988 • 81 citations

Molecular beam epitaxial growth and transmission electron microscopy studies of thin GaAs/InAs(100) multiple quantum well structures

1985 • 75 citations

Instabilities of (110) III–V compounds grown by molecular beam epitaxy

1983 • 61 citations