Energy deposition and penetration depth of heavy ions in the electronic stopping region

Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline Targets

1969 • 3,398 citations

Defect studies in crystals by means of channeling

1968 • 362 citations

Channeling of medium-mass ions through silicon

1968 • 204 citations

Depth Profiles of the Lattice Disorder Resulting from Ion Bombardment of Silicon Single Crystals

1970 • 184 citations

Spatial distribution of energy deposited into atomic processes in ion-implanted silicon

1970 • 139 citations

Analysis of disorder distributions in boron implanted silicon

1970 • 94 citations

Sputtering efficiency of amorphous substances

1968 • 78 citations

ION IMPLANTATION DEPTH DISTRIBUTIONS: ENERGY DEPOSITION INTO ATOMIC PROCESSES AND ION LOCATIONS

1970 • 65 citations

DEPTH DISTRIBUTION OF DIVACANCIES IN 400-keV O+ ION-IMPLANTED SILICON

1970 • 45 citations

Projected ranges of light ions in heavy substances

1968 • 43 citations

DEPTH DISTRIBUTION OF EPR CENTERS IN 400-keV O+ ION-IMPLANTED SILICON

1970 • 40 citations

The distribution of damage produced by ion implantation of silicon at room temperature

1970 • 33 citations

The dependence of sputtering efficiency on ion energy and angle of incidence

1971 • 33 citations