Microanalysis of Si, S and Zn in GaSb by use of direct observation of (p, p′γ) reactions

ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERING

1967 • 271 citations

Isospin selection rule in the 28Si(d, α)26Al reaction

1968 • 27 citations

Mechanism of the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="normal">Si</mml:mi><mml:mo>(</mml:mo><mml:mi>d</mml:mi><mml:mo>,</mml:mo><mml:mi> </mml:mi><mml:mi>p</mml:mi><mml:mo>)</mml:mo></mml:math>Reactions Below 3 MeV

1964 • 26 citations

Energy Levels in ⁷⁰Ga

1970 • 17 citations

Investigation of the reaction 32S(d, p)33S in the deuteron energy range 1.5 – 2.5 MeV

1966 • 11 citations

Mesure par réactions nucléaires résonnantes du ralentissement et de la dispersion en énergie de protons

1971 • 7 citations