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Hydrogen implantation in silicon between 1.5 and 60 kev

Data up to Jan 2025

Published1976
Citations101
References26

Total Citations Per Year

Abstract

References (26)

Microanalysis by the direct observation of nuclear reactions using a 2 MeV Van de Graaff

1971 • 442 citations

Applications of Ion Beams to Metals

1974 • 433 citations

Stopping power of energetic helium ions transmitted through thin silicon crystals in channelling and random directions

1972 • 149 citations

Nondestructive Analysis for Trace Amounts of Hydrogen

1972 • 146 citations

A technique for measuring hydrogen concentration versus depth in solid samples

1973 • 133 citations

Identification of the dominant diffusing species in silicide formation

1974 • 125 citations

Sputtering and backscattering of keV light ions bombarding random targets

1973 • 123 citations

Depth profiling of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mmultiscripts><mml:mrow><mml:mi mathvariant="normal">He</mml:mi></mml:mrow><mml:mprescripts /><mml:mrow /><mml:mrow><mml:mn>3</mml:mn></mml:mrow><mml:mrow /><mml:mrow /></mml:mmultiscripts></mml:mrow></mml:math>and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mmultiscripts><mml:mrow><mml:mi mathvariant="normal">H</mml:mi></mml:mrow><mml:…

1974 • 79 citations

Electrical properties of n-type Si layers doped with proton bombardment induced shallow donors

1972 • 76 citations

A gas-release study of the annealing of bombardment-induced disorder∗ (studies on bombardment-induced disorder—I)

1969 • 67 citations

A NEW utilization of11B ion beams: Hydrogen analysis by1H11B,α)α α nuclear reaction

1974 • 65 citations

EPR of conduction electrons produced in silicon by hydrogen ion implantation

1974 • 58 citations

Location of interstitial deuterium sites in niobium by channeling

1972 • 49 citations

Spatial distribution of defects in ion bombarded silicon and germanium

1971 • 44 citations

Redistribution of boron in silicon after high−temperature proton irradiation

1975 • 39 citations

On conversion from an energy scale to a depth scale in channelling experiments

1973 • 37 citations

Ion bombardment induced phase transformations and inert gas mobility in the semiconductors Ge, Si, and GaAs

1970 • 37 citations

Transmission energy loss of light channeled particles in thin silicon crystals

1972 • 35 citations

Random stopping power for protons in silicon

1972 • 23 citations

Spectres de diffusion Raman du monocristal de thiourée dans les phases para-et ferroélectrique constantes de forces intermoléculaires

1973 • 19 citations

Non-destructive measurement of hydrogen in thin sheet materials

1974 • 15 citations

Mesure des variations du nombre moyen ν de neutrons prompts émis lors de la fission de 239Pu induite par des neutrons de résonances

1973 • 9 citations

Energy loss and projected range of alpha particles in zinc telluride

1974 • 8 citations

Damage in the Surface Region of Silicon Produced by Sputter-Etching

1974 • 7 citations

Blistering of Niobium Due to Low Energy Helium Ion Bombardment Investigated by Rutherford Backscattering

1974 • 5 citations

Depth Distribution and Migration of Implanted Helium in Metal Foils Using Proton Backscattering

1974 • 3 citations

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Hydrogen implantation in silicon between 1.5 and 60 kev (1976) – Radiation Effects | Metascience Observatory Explorer