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EFFECT OF DOPING ON FREQUENCY OF STIMULATED AND INCOHERENT EMISSION IN GaAs DIODES

G. C. Dousmanis, C.W. Mueller, H. Nelson
DOI: 10.1063/1.1753901
Applied Physics Letters

Data up to Jan 2025

Published1963
Citations37
References8
Fields
Computer sciencePhysicsInformation retrievalWorld Wide WebOptoelectronics

Total Citations Per Year

Abstract

References (8)

Thomas-Fermi Approach to Impure Semiconductor Band Structure

1963 • 632 citations

BAND-FILLING MODEL FOR GaAs INJECTION LUMINESCENCE

1963 • 114 citations

One-Dimensional Impurity Bands

1958 • 112 citations

Tunneling-Assisted Photon Emission in Gallium Arsenide<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>pn</mml:mi></mml:math>Junctions

1962 • 94 citations

RECOMBINATION RADIATION IN GaAs BY OPTICAL AND ELECTRICAL INJECTION

1962 • 81 citations

Recombination Radiation in GaAs

1963 • 80 citations

Electron-Hole and Electron-Impurity Band Tunneling in GaAs Luminescent Junctions

1963 • 71 citations

EFFECT OF DOPING ON THE EMISSION PEAK AND THE ABSORPTION EDGE OF GaAs

1963 • 40 citations

Cited By (0)

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