Initial stage of room-temperature metal-silicide formation studied by high-energy<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msup><mml:mrow><mml:mi mathvariant="normal">He</mml:mi></mml:mrow><mml:mrow><mml:mo>+</mml:mo></mml:mrow></mml:msup></mml:mrow></mml:math>-ion scattering

First phase nucleation in silicon–transition-metal planar interfaces

1976 • 500 citations

Review of binary alloy formation by thin film interactions

1979 • 256 citations

Selective growth of metal-rich silicide of near-noble metals

1975 • 249 citations

Direct observation of the nucleation and growth modes of Ag/Si(111)

1980 • 168 citations

Microscopic Compound Formation at the Pd-Si(111) Interface

1979 • 120 citations

Structure and electrical characteristics of epitaxial palladium silicide contacts on single crystal silicon and diffused P-N diodes

1972 • 117 citations

LEED-AES study of the AuSi(100) system

1979 • 112 citations

AES study of the very first stages of condensation of gold films on silicon (111) surfaces

1977 • 107 citations

A Model on the Mechanism of Room Temperature Interfacial Intermixing Reaction in Various Metal‐Semiconductor Couples: What Triggers the Reaction?

1980 • 101 citations

Lattice Location by Channeling Angular Distributions: Bi Implanted in Si

1972 • 88 citations

Structure study of Au–Si interface by MeV ion scattering

1981 • 64 citations

Surface science: recent progress and perspectives

1975 • 55 citations

Chemical and structural properties of the Pd/Si interface during the initial stages of silicide formation

1979 • 55 citations