Schottky barrier Ga1−xAlxAs1−ySby alloy avalanche photodetectors

Room-temperature cw operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1.1 μ m

1976 • 276 citations

Evidence for tunneling in reverse-biased III-V photodetector diodes

1980 • 131 citations

Chapter 5 Avalanche Photodiodes

1977 • 128 citations

GaInAsP/InP avalanche photodiodes

1978 • 108 citations

The Ga0.47In0.53As homojunction photodiode—A new avalanche photodetector in the near infrared between 1.0 and 1.6 μm

1978 • 86 citations

High-efficiency In1−xGaxAsyP1−y/InP photodetectors with selective wavelength response between 0.9 and 1.7 μm

1978 • 75 citations

Crystal synthesis, electrical properties, and spontaneous and stimulated photoluminescence of In1−xGaxP:N grown from solution

1973 • 64 citations

InxGa1−xAsyP1−y/InP heterojunction photodiodes

1977 • 47 citations

Ion-implanted InGaAsP avalanche photodiode

1978 • 43 citations

Liquid-phase epitaxial growth of lattice-matched InGaAsP on (100)-InP for the 1.15–1.31-μm spectral region

1978 • 42 citations

Quantum-well Inp-Inl−xGaxPl−zAsz heterostructure lasers grown by liquid phase epitaxy (LPE)

1980 • 38 citations

Very high quantum efficiency GaSb mesa photodetectors between 1.3 and 1.6 μm

1980 • 37 citations

Planar type vapor-phase epitaxial In_0.53Ga_0.47As photodiode

1980 • 23 citations

AlGaAsSb Avalanche Photodiodes for 1.0–1.3-µm Wavelength Region

1979 • 13 citations