High quantum efficiency InP mesas grown by hybrid epitaxy on Si substrates

Finite element procedures in engineering analysis

1982 • 5,234 citations

A high-resolution multiple-crystal multiple-reflection diffractometer

1989 • 196 citations

Scanning cathodoluminescence microscopy: A unique approach to atomic-scale characterization of heterointerfaces and imaging of semiconductor inhomogeneities

1991 • 162 citations

Epitaxial Lateral Overgrowth of GaAs on a Si Substrate

1989 • 159 citations

Use of tertiarybutylarsine in the metalorganic chemical vapor deposition growth of GaAs

1987 • 106 citations

Low-temperature metalorganic chemical vapor deposition of InP on Si(001)

1991 • 97 citations

Stable cw operation at room temperature of a 1.5-μm wavelength multiple quantum well laser on a Si substrate

1992 • 83 citations

RTK 2-a double-crystal x-ray topographic camera applying new principles

1988 • 62 citations

Liquid-Phase Epitaxial Growth of III-V Compound Semiconductor Materials and their Device Applications,

1990 • 61 citations

Incorporation of Si in Liquid Phase Epitaxial InP Layers

1976 • 56 citations

High quality GaAs on Si by conformal growth

1992 • 36 citations

InAlAs/InGaAs metal-semiconductor-metal photodiodes heteroepitaxially grown on Si substrates

1994 • 17 citations