Real-time laser-light scattering studies of surface topography development during GaAs MBE growth

Dynamics of film growth of GaAs by MBE from Rheed observations

1983 • 951 citations

Anisotropic surface migration of Ga atoms on GaAs (001)

1989 • 200 citations

Biexciton creation and recombination in a GaAs quantum well

1992 • 129 citations

Ga adatom incorporation kinetics at steps on vicinal GaAs (001) surfaces during growth of GaAs by molecular beam epitaxy

1992 • 76 citations

An x-ray photoelectron spectroscopy study on ozone treated GaAs surfaces

1986 • 73 citations

Cleaning chemistry of GaAs(100) and InSb(100) substrates for molecular beam epitaxy

1983 • 73 citations

Oxide thickness effect and surface roughening in the desorption of the oxide from GaAs

1991 • 70 citations

Surface topography changes during the growth of GaAs by molecular beam epitaxy

1991 • 68 citations

Surface Stoichiometry and Morphology of MBE Grown (001)GaAs through the Analysis of RHEED Oscillations

1985 • 62 citations

I n s i t u observation of molecular beam epitaxy of GaAs and AlGaAs under deficient As4 flux by scanning reflection electron microscopy

1989 • 44 citations

Photoluminescence spectroscopy in GaAs/AlAs superlattices as a function of temperature and pressure: The influence of sample quality

1991 • 17 citations

In-situ microscopic observation of GaAs surfaces during molecular beam epitaxy and metalorganic molecular beam epitaxy by scanning microprobe reflection high energy electron diffraction

1990 • 12 citations

Direct correlation between reflection electron diffraction intensity behavior during the growth of AlxGa1−xAs/GaAs quantum wells and their photoluminescence properties

1990 • 10 citations