Application of selective epitaxy to fabrication of nanometer scale wire and dot structures
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References (14)
Gain and the threshold of three-dimensional quantum-box lasers
1986 • 1,105 citations
Stimulated emission in semiconductor quantum wire heterostructures
1989 • 638 citations
Optically detected carrier confinement to one and zero dimension in GaAs quantum well wires and boxes
1986 • 478 citations
Optical Anisotropy in a Quantum-Well-Wire Array with Two-Dimensional Quantum Confinement
1989 • 370 citations
Low-temperature photoluminescence from InGaAs/InP quantum wires and boxes
1987 • 325 citations
Optical spectroscopy of ultrasmall structures etched from quantum wells
1986 • 304 citations
Quantum noise and dynamics in quantum well and quantum wire lasers
1984 • 227 citations
Effects of two-dimensional confinement on the optical properties of InGaAs/InP quantum wire structures
1988 • 143 citations
Kinetic aspects in the vapour phase epitaxy of III–V compounds
1975 • 129 citations
Selective epitaxy in the conventional metalorganic vapor phase epitaxy of GaAs
1989 • 68 citations
Quantum wires in InGaAs/InP fabricated by holographic photolithography
1989 • 54 citations
Compositional modulation in AlxGa1−xAs epilayers grown by molecular beam epitaxy on the (111) facets of grooves in a nonplanar substrate
1989 • 34 citations
Cathodoluminescence system for a scanning electron microscope using an optical fiber for light collection
1989 • 20 citations
Nanometer scale wire structures fabricated by diffusion-induced selective disordering of a GaAs(AlGaAs) quantum well
1989 • 15 citations