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High quality molecular beam epitaxial growth on patterned GaAs substrates

J. S. Smith, P. L. Derry, S. Margalit, Amnon Yariv
DOI: 10.1063/1.96012
Applied Physics Letters

Data up to Jan 2025

Published1985
Citations73
References6
Fields
Materials scienceChemistryGeologyMedicinePhysicsOptoelectronicsNanotechnologyOptics

Total Citations Per Year

Abstract

References (6)

GaAs planar technology by molecular beam epitaxy (MBE)

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Growth of three-dimensional dielectric waveguides for integrated optics by molecular-beam-epitaxy method

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Influence of growth conditions on the threshold current density of double-heterostructure lasers prepared by molecular-beam epitaxy

1980 • 37 citations

Self-aligned three-dimensional Ga1−xAlxAs structures grown by molecular beam epitaxy

1977 • 22 citations

Monolithic integration of an AlGaAs/GaAs multiquantum well laser and GaAs metal-semiconductor field-effect transistors on a semi-insulating GaAs substrate by molecular beam epitaxy

1984 • 20 citations

Single-longitudinal-mode GaAs/GaAlAs channeled-substrate lasers grown by molecular beam epitaxy

1984 • 18 citations

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