A New Slab Model Approach for Electronic Structure Calculation of Polar Semiconductor Surface

Structure of GaAs(001)<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mo>(</mml:mo><mml:mn>2</mml:mn><mml:mn /><mml:mo>×</mml:mo><mml:mn>4</mml:mn><mml:mo>)</mml:mo><mml:mo>−</mml:mo><mml:mi>c</mml:mi><mml:mo>(</mml:mo><mml:mn>2</mml:mn><mml:mn /><mml:mo>×</mml:mo><mml:mn>8</mml:mn><mml:mo>)</mml:mo></mml:math>Determined by Scanning Tunneling Microscopy

1988 • 545 citations

Atomic structure of GaAs(100)-(2×1) and (2×4) reconstructed surfaces

1987 • 448 citations

Composition and structure of differently prepared GaAs(100) surfaces studied by LEED and AES

1978 • 313 citations

Structure and stoichiometry of {100} GaAs surfaces during molecular beam epitaxy

1978 • 187 citations

Surface structure of As-stabilized GaAs(001): 2×4,c(2×8), and domain structures

1988 • 126 citations

First-principles theory of sulfur adsorption on semi-infinite Ge(001)

1990 • 52 citations

(2×2) reconstructions of the {111} polar surfaces of GaAs

1986 • 40 citations

Theoretical studies of reconstructed GaAs(100) surfaces using first principle calculations

1987 • 21 citations