Single electron switching events in nanometer-scale Si MOSFET's

Discrete Resistance Switching in Submicrometer Silicon Inversion Layers: Individual Interface Traps and Low-Frequency (<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mfrac><mml:mrow><mml:mn>1</mml:mn></mml:mrow><mml:mrow><mml:mi>f</mml:mi></mml:mrow></mml:mfrac></mml:math>?) Noise

1984 • 690 citations

One-Dimensional Localization and Interaction Effects in Narrow (0.1-μm) Silicon Inversion Layers

1982 • 182 citations

Electron trapping in electron-beam irradiated SiO2

1978 • 148 citations

10-nm linewidth electron beam lithography on GaAs

1983 • 138 citations

1/f noise in n-channel silicon-gate MOS transistors

1982 • 94 citations

Magnetoconductance and quantized confinement in narrow silicon inversion layers

1984 • 53 citations

50−nm silicon structures fabricated with trilevel electron beam resist and reactive-ion etching

1981 • 44 citations

Electron beam lithography from 20 to 120 keV with a high quality beam

1983 • 36 citations

Trilevel lift‐off process for refractory metals

1982 • 21 citations

Nonmetallic localization and interaction in one-dimensional (0.1 μm) Si MOSFETs

1983 • 10 citations

MOSFET Degradation due to stressing of thin oxide

1982 • 7 citations