Photoluminescence Associated with Multivalley Resonant Impurity States above the Fundamental Band Edge: N Isoelectronic Traps in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="normal">Ga</mml:mi><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">As</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">P</mml:mi></mml:mrow…

Band Structures and Pseudopotential Form Factors for Fourteen Semiconductors of the Diamond and Zinc-blende Structures

1966 • 1,619 citations

Self-Consistent Model of Hydrogen Chemisorption

1969 • 1,553 citations

Wave Functions for Impurity Levels

1954 • 798 citations

Isoelectronic Traps Due to Nitrogen in Gallium Phosphide

1966 • 596 citations

Semiconductors and Semimetals

2003 • 539 citations

Isoelectronic Donors and Acceptors

1966 • 388 citations

Isoelectronic Traps Due to Nitrogen in Gallium Phosphide

1965 • 313 citations

Toward a Theory of Isoelectronic Impurities in Semiconductors

1968 • 302 citations

Theory of Scattering in Solids

1964 • 256 citations

Fluorescent Decay Times of Excitons Bound to Isoelectronic Traps in GaP and ZnTe

1967 • 243 citations

Critical Points and Ultraviolet Reflectivity of Semiconductors

1962 • 235 citations

Effect of Te and S Donor Levels on the Properties of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="normal">Ga</mml:mi><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">As</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">P</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>…

1968 • 143 citations

Recombination processes associated with “Deep states” in gallium phosphide

1970 • 142 citations

Reflectance and Photoemission From Si

1962 • 114 citations

Interference between Intermediate States in the Optical Properties of Nitrogen-Doped Gallium Phosphide

1967 • 109 citations

Electroluminescence of Diffused GaAs1 − xPx Diodes with Low Donor Concentrations

1969 • 101 citations

Evidence for Quasilocalized States Associated with High-Energy Conduction-Band Minima in Semiconductors, Particularly Se-Doped GaSb

1966 • 57 citations

Energy-Dependent Capture Cross Sections and the Photoluminescence Excitation Spectra of Gallium Phosphide above the Threshold for Intrinsic Interband Absorption

1968 • 53 citations

Sulfur Donor Level Associated with (100) Conduction Band of GaSb

1966 • 39 citations

EFFECT OF DONOR IMPURITIES ON THE DIRECT-INDIRECT TRANSITION IN Ga(As1 - xPx)

1966 • 37 citations

Optical Phase-Shift Measurement of Carrier Decay Times (77°K) on Lightly Doped Double-Surface and Surface-Free Epitaxial GaAs

1971 • 36 citations

THE NITROGEN ISOELECTRONIC TRAP IN PHOSPHORUS-RICH GALLIUM ARSENIDE PHOSPHIDE

1969 • 33 citations

Impurity states associated with subsidiary energy-band minima

1963 • 26 citations