Current injection GaAs-AlxGa1−xAs multi-quantum-well heterostructure lasers prepared by molecular beam epitaxy

Laser oscillation from quantum states in very thin GaAs−Al0.2Ga0.8As multilayer structures

1975 • 211 citations

GaAs–AlxGa1−xAs Double Heterostructure Injection Lasers

1971 • 195 citations

Low-current-threshold and high-lasing uniformity GaAs–AlxGa1−xAs double-heterostructure lasers grown by molecular beam epitaxy

1979 • 94 citations

The influence of bulk nonradiative recombination in the wide band-gap regions of molecular beam epitaxially grown GaAs-AlxGa1−xAs DH lasers

1978 • 66 citations

Low-threshold continuous laser operation (300–337 °K) of multilayer MO-CVD AlxGa1−xAs-GaAs quantum-well heterostructures

1978 • 56 citations

Laser oscillation with optically pumped very thin GaAs-AlxGa1−xAs multilayer structures and conventional double heterostructures

1976 • 51 citations

Lasing Transitions in p+-n-n+ (AlGa) As–Ga As Heterojunction Lasers

1972 • 25 citations

The suppression of internally circulating modes in (GaAl)As/GaAs heterostructure lasers and their effect on catastrophic degradation and efficiency

1977 • 20 citations