Raman scattering determination of free-carrier concentration and surface space-charge layer in 〈100〉 n-GaAs

Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV

1983 • 3,775 citations

Light Scattering in Solids II

1982 • 2,273 citations

Proceedings of the Society of Photo-optical Instrumentation Engineers

1975 • 755 citations

Fundamentals of Semiconductor Devices

1966 • 202 citations

The surface electronic structure of 3–5 compounds and the mechanism of Fermi level pinning by oxygen (passivation) and metals (Schottky barriers)

1979 • 104 citations

Raman scattering studies of surface space charge layers and Schottky barrier formation in InP

1979 • 62 citations

In SituInvestigation of Band Bending during Formation of GaAs-Ge Heterostructures

1984 • 53 citations

Effects of optically excited carriers on Raman spectra from InP

1984 • 47 citations

Raman spectroscopy as a surface sensitive technique on semiconductors

1981 • 22 citations

Passivation of the GaAs surface by an amorphous phosphorus overlayer

1984 • 20 citations

Raman scattering in the depletion region of GaAs

1974 • 11 citations