Calibration of the multiple quantum well probe technique for dry-etch-induced damage analysis
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Abstract
References (7)
Investigation of reactive ion etching induced damage in GaAs–AlGaAs quantum well structures
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Near-surface GaAs/<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>0.7</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Al</mml:mi></mml:mrow><mml:mrow><mml:mn>0.3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>As quantum wells: …
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Interaction of energetic ions with inhomogeneous solids
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Nonradiative damage measured by cathodoluminescence in etched multiple quantum well GaAs/AlGaAs quantum dots
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Al 1-X Ga x As/GaAs Superlattice Disordering By Ion-Implantation And Diffusion: A TEM Study Of Mechanisms
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