Comments on “RED intensity oscillations during MBE of GaAs”

Oscillations in the surface structure of Sn-doped GaAs during growth by MBE

1981 • 360 citations

Structure and stoichiometry of {100} GaAs surfaces during molecular beam epitaxy

1978 • 187 citations

RED intensity oscillations during MBE of GaAs

1981 • 111 citations

Transients in the rate of crystal growth

1980 • 105 citations

Angle-resolved photoemission from As-stable GaAs (001) surfaces prepared by MBE

1981 • 63 citations

Comparative LEED and RHEED examination of stepped surfaces; Application to Cu(111) and GaAs(100) vicinal surfaces

1977 • 58 citations

Chromium and tellurium redistribution in GaAs and Al0.3Ga0.7As grown by molecular beam epitaxy

1980 • 23 citations

Iron doping in gallium arsenide by molecular beam epitaxy

1980 • 15 citations