Back to search
Thermal Dissociation of Excitons Bounds to Neutral Acceptors in High-Purity GaAs
Data up to Jan 2025
Published1971
Citations266
References8
Total Citations Per Year
Abstract
References (8)
Temperature Dependence of the Energy Gap in GaAs and GaP
1969 • 303 citations
Bound-Exciton, Free-Exciton, Band-Acceptor, Donor-Acceptor, and Auger Recombination in GaAs
1968 • 240 citations
Absorption and Luminescence of Excitons at Neutral Donors in Gallium Phosphide
1967 • 204 citations
Free-Carrier and Exciton Recombination Radiation in GaAs
1968 • 118 citations
The Mechanism of the Luminescence of Solids
1947 • 111 citations
Identification of exciton-neutral donor complexes in the photoluminescence of high purity GaAs
1970 • 62 citations
Bound exciton luminescence in epitaxial Sn-doped gallium-arsenide
1970 • 53 citations
Two-hole transition in the luminescence of excitons bound to neutral acceptors in GaAs
1971 • 14 citations
Cited By (0)
Loading...