Temperature and Stress Dependence of Electron Lifetime in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi></mml:math>-Type Semiconductors Between 1.5 and 4.2°K

Cyclotron Resonance Line Broadening due to Carrier-Carrier Interaction in Germanium

1964 • 81 citations

Electron Scattering by Neutralized Acceptors in Germanium I.Gallium and Indium

1966 • 73 citations

Proposal for a cyclotron resonance maser in InSb

1964 • 37 citations

Photoexcited Electron Capture by Ionized and Neutral Shallow Impurities in Silicon at Liquid-Helium Temperatures

1966 • 32 citations

Hot Electron Effect in Cyclotron Resonance of Germanium

1962 • 22 citations