Comparative study of Y and other transition metals on GaAs(110)

Many-electron singularity in X-ray photoemission and X-ray line spectra from metals

1970 • 2,457 citations

Theory of Surface States

1965 • 1,283 citations

New and unified model for Schottky barrier and III–V insulator interface states formation

1979 • 917 citations

The structure and properties of metal-semiconductor interfaces

1982 • 908 citations

Photoemission in Solids I

1978 • 875 citations

Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface States

1980 • 720 citations

Electronegativities of the Elements

1956 • 716 citations

Electronic structure of a metal-semiconductor interface

1976 • 452 citations

Schottky barriers: An effective work function model

1981 • 429 citations

Surface Core-Level Binding-Energy Shifts for GaAs(110) and GaSb(110)

1980 • 336 citations

An ellipsoidal mirror display analyzer system for electron energy and angular measurements

1980 • 284 citations

The metal-semiconductor interface: Si (111) and zincblende (110) junctions

1977 • 278 citations

Transition-metal impurities in III-V compounds

1985 • 245 citations

Fermi-level position at a semiconductor-metal interface

1983 • 175 citations

Role of surface antisite defects in the formation of Schottky barriers

1982 • 135 citations

Interdiffusion and reaction at the Fe/GaAs(110) interface

1986 • 102 citations

Recent models of Schottky barrier formation

1985 • 99 citations

First results from a 6 m/10 m toroidal grating monochromator for soft x-rays

1984 • 83 citations

Investigation of the mechanism for Schottky barrier formation by group III metals on GaAs(110)

1979 • 80 citations

A microscopic model of metal–semiconductor contacts

1985 • 77 citations

Electronic properties and chemistry of Ti/GaAs and Pd/GaAs interfaces

1986 • 73 citations

Normal-incidence grating spectrograph with large acceptance for inverse photoemission

1985 • 68 citations

Structure of the Al-GaAs(110) interface from an energy-minimization approach

1982 • 63 citations

The mechanisms of Schottky barrier pinning in III–V semiconductors: Criteria developed from microscopic (atomic level) and macroscopic experiments

1986 • 62 citations

Independence of Fermi-Level Position and Valence-Band Edge Discontinuity at GaAs-Ge(100) Interfaces

1984 • 59 citations

Calculation of the spin-polarized electronic structure of an interstitial iron impurity in silicon

1985 • 56 citations

Chemisorption site geometry and interface electronic structure of Ga and Al on GaAs(110)

1979 • 55 citations

In SituInvestigation of Band Bending during Formation of GaAs-Ge Heterostructures

1984 • 53 citations

Prediction of a low-spin ground state in the GaAs:<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msup><mml:mrow><mml:mi mathvariant="normal">V</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn><mml:mo>+</mml:mo></mml:mrow></mml:msup></mml:mrow></mml:math>impurity system

1986 • 47 citations

Critical development stages for the reactive Cr-GaAs(110) interface

1985 • 44 citations

Metal-derived band gap states: Ti on GaAs(110)

1986 • 44 citations

Transition metals on GaAs(110): A case for extrinsic surface states

1986 • 38 citations

Direct Observation of Adsorbate-Induced Band-Gap States on GaAs(110)

1986 • 35 citations

Theoretical investigation of the electrical and optical activity of vanadium in GaAs

1986 • 33 citations

Photoemission study of the development of the Ti/GaAs(110) interface

1986 • 33 citations

The effects of microstructure on interface characterization

1986 • 31 citations

Absorption spectra of Ti-doped GaAs

1986 • 26 citations

Surface donors and acceptors on GaAs and InP exposed to oxygen

1982 • 24 citations

Formation of metal–semiconductor interfaces: From the submonolayer regime to the real Schottky barrier

1985 • 22 citations

Reaction at a refractory metal/semiconductor interface: V/GaAs(110)

1985 • 21 citations

Chemical reaction and anion trapping at the Yb/GaAs(110) interface

1986 • 20 citations