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Reflectivity of HgSe and HgTe from 4 to 12 eV at 12 and 300°K

Data up to Jan 2025

Published1964
Citations40
References21

Total Citations Per Year

Abstract

References (21)

Optical Properties of Semiconductors

1963 • 2,093 citations

Advances in Electronics and Electron Physics

1969 • 800 citations

Optical Constants of Silicon in the Region 1 to 10 ev

1960 • 556 citations

Optical Constants of Germanium in the Region 1 to 10 ev

1959 • 336 citations

Proceedings of the International Conference on Semiconductor Physics, Prague 1960

1961 • 334 citations

Fundamental Reflectivity and Band Structure of ZnTe, CdTe, and HgTe

1963 • 278 citations

The valence band structure of the III–V compounds

1962 • 250 citations

Critical Points and Ultraviolet Reflectivity of Semiconductors

1962 • 235 citations

Crystallographic Polarity in the II-VI Compounds

1962 • 234 citations

Interband Transitions in Groups 4, 3-5, and 2-6 Semiconductors

1962 • 202 citations

Fundamental Reflectivity Spectrum of Semiconductors with Zinc-Blende Structure

1961 • 178 citations

Absorption Spectrum of Germanium and Zinc-Blende-Type Materials at Energies Higher than the Fundamental Absorption Edge

1963 • 172 citations

Fundamental Optical Absorption in the IIA-VIB Compounds

1959 • 159 citations

Band Structure of Silicon, Germanium, and Related Semiconductors

1962 • 137 citations

Reflectivity of Gray Tin Single Crystals in the Fundamental Absorption Region

1962 • 103 citations

Band Structure of HgSe and HgSe–HgTe Alloys

1961 • 74 citations

Observation of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>d</mml:mi></mml:math>Bands in 3-5 Semiconductors

1962 • 63 citations

Fundamental Reflectivity of GaAs at Low Temperature

1962 • 62 citations

Optical absorption in germanium

1960 • 61 citations

Reflectivity and Optical Constants of Indium Arsenide, Indium Antimonide, and Gallium Arsenide

1961 • 60 citations

Bonding and Antibonding Spin-Orbit Splittings

1962 • 29 citations

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Reflectivity of HgSe and HgTe from 4 to 12 eV at 12 and 300°K (1964) – Physical Review | Metascience Observatory Explorer