Luminescence studies of individual dislocations in II-VI (ZnSe) and III-V (InP) semiconductors

Electronmicroscopy and Analysis-1981

1984 • 823 citations

Hot electrons and phonons under high intensity photoexcitation of semiconductors

1978 • 302 citations

Wannier Exciton in an Electric Field. I. Optical Absorption by Bound and Continuum States

1970 • 269 citations

Evidence for low surface recombination velocity on n-type InP

1977 • 239 citations

Some Predicted Effects of Temperature Gradients on Diffusion in Crystals

1953 • 236 citations

Donor bound-exciton excited states in zinc selenide

1981 • 215 citations

The organometallic chemical vapour deposition of ZnS and ZnSe at atmospheric pressure

1982 • 180 citations

Comparison of MOCVD-Grown with Conventional II-VI Materials Parameters for EL Thin Films)

1984 • 173 citations

Auger Recombination of Excitons Bound to Neutral Donors in Gallium Phosphide and Silicon

1966 • 172 citations

Recombination radiation on dislocations in silicon

1976 • 138 citations

Auger recombination in GaAs and GaSb

1977 • 122 citations

An investigation of the deep level photoluminescence spectra of InP(Mn), InP(Fe), and of undoped InP

1982 • 106 citations

Observation of cathodoluminescence at single dislocations by STEM

1980 • 93 citations

Deep radiative levels in InP

1982 • 79 citations

Photoluminescence at dislocations in GaAs and InP

1979 • 66 citations

Semiconductor material assessment by scanning electron microscopy*

1977 • 65 citations

Nonradiative recombination at dislocations in III–V compound semiconductors

1980 • 50 citations

Bound States in Dislocations

1954 • 47 citations

Lattice structure at ZnSeGaAs heterojunction interfaces prepared by organometallic chemical vapor deposition

1983 • 45 citations

Investigation of the electronic effects of dislocations by stem

1981 • 31 citations

Deep electron level calculations for dislocations in Si and Ge recursion approach exploiting the translational symmetry

1984 • 28 citations

Optogalvanic Effect Study of Vibrational Relaxation in CO₂Laser Process

1983 • 18 citations

Inhomogeneous broadening of edge recombination radiation

1970 • 16 citations

Interface-recombination-controlled minority-carrier lifetime in n-type gap

1977 • 15 citations

Exciton recombination processes in zinc selenide

1983 • 12 citations

Anisotropy of the Free Carrier Piezoelectric Scattering by Dislocations in III–V Compounds

1982 • 12 citations

Electrical properties of dislocation lines in silicon

1982 • 5 citations

TEM cathodoluminescence study of recombination behaviour at dislocations in indium phosphide

1984 • 4 citations