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InGaAs/InP multiple quantum well waveguide phase modulator

Data up to Jan 2025

Published1987
Citations62
References16

Total Citations Per Year

Abstract

References (16)

Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect

1984 • 1,700 citations

Nature of wavelength chirping in directly modulated semiconductor lasers

1984 • 322 citations

Extremely high quality Ga0.47In0.53As/InP quantum wells grown by chemical beam epitaxy

1986 • 169 citations

Strong polarization-sensitive electroabsorption in GaAs/AlGaAs quantum well waveguides

1985 • 129 citations

Growth of Ga0.47In0.53As-InP quantum wells by low pressure metalorganic chemical vapor deposition

1983 • 98 citations

100 ps waveguide multiple quantum well (MQW) optical modulator with 10:1 on/off ratio

1985 • 98 citations

Optical properties of very thin GaInAs(P)/InP quantum wells grown by gas source molecular beam epitaxy

1986 • 91 citations

High quality narrow GaInAs/InP quantum wells grown by atmospheric organometallic vapor phase epitaxy

1986 • 82 citations

Electric-field-induced refractive index variation in quantum-well structure

1985 • 72 citations

Anisotropic electroabsorption and optical modulation in InGaAs/InAlAs multiple quantum well structures

1986 • 54 citations

Low loss InGaAs/InP multiple quantum well waveguides

1986 • 46 citations

Waveguide-Type Optical Modulator of GaAs Quantum Well Double Heterostructures Using Electric Field Effect on Exciton Absorption

1985 • 46 citations

Highly efficient waveguide phase modulator for integrated optoelectronics

1986 • 45 citations

Frequency chirping of external modulation and its reduction

1985 • 37 citations

Dispersion of linewidth-broadening factor in 1.5 μm laser diodes

1985 • 27 citations

Gigahertz-bandwidth InGaAsP/InP optical modulators/switches with double-hetero waveguides

1984 • 23 citations

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