Electroreflectance study of ordered Ga0.5In0.5P alloys grown on GaAs by organometallic vapor phase epitaxy

Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band-gap energy

1987 • 434 citations

Atomic structure and ordering in semiconductor alloys

1985 • 369 citations

Studies of GaxIn1−xP layers grown by metalorganic vapor phase epitaxy; Effects of V/III ratio and growth temperature

1986 • 233 citations

Growth of high-quality inGaAIP epilayers by MOCVD using methyl metalorganics and their application to visible semiconductors lasers

1986 • 169 citations

Atomic Structure of Ordered InGaP Crystals Grown on (001)GaAs Substrates by Metalorganic Chemical Vapor Deposition

1987 • 133 citations

Ordered structure in OMVPE-grown Ga0.5In0.5P

1988 • 109 citations

Ordering-induced changes in the optical spectra of semiconductor alloys

1988 • 39 citations

Structural stability and selectivity of thin epitaxial semiconductors

1986 • 36 citations

Band structure enhancement of indirect transitions

1977 • 23 citations

Band structure of GaxIn1−xP alloys

1973 • 13 citations