Piezoresistance and Piezo-Hall Effects in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>- and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi></mml:math>-Type Aluminum Antimonide

Band structure of indium antimonide

1957 • 3,604 citations

Transport and Deformation-Potential Theory for Many-Valley Semiconductors with Anisotropic Scattering

1956 • 1,312 citations

Transport Properties of a Many-Valley Semiconductor

1955 • 533 citations

Band Structure and Transport Properties of Some 3–5 Compounds

1961 • 438 citations

Physics of III–V compounds

1965 • 313 citations

Band Structure of the Intermetallic Semiconductors from Pressure Experiments

1961 • 258 citations

The valence band structure of the III–V compounds

1962 • 250 citations

Effect of Pressure on the Absorption Edges of Some III-V, II-VI, and I-VII Compounds

1961 • 247 citations

Temperature Dependence of the Piezoresistance of High-Purity Silicon and Germanium

1957 • 184 citations

Compound Semiconductors

1963 • 177 citations

Semiconducting III–V compounds

1962 • 167 citations

Piezoresistive Properties of Heavily Doped<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type Silicon

1964 • 118 citations

Infrared Lattice Bands in AlSb

1962 • 105 citations

Piezoresistance of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type Germanium

1959 • 102 citations

The effect of pressure on the properties of germanium and silicon

1959 • 95 citations

Piezoresistance and Piezo-Hall-Effect in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type Silicon

1963 • 76 citations

Infrared Absorption in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type Aluminum Antimonide

1960 • 73 citations

Conduction Band Minima in AlAs and AlSb

1963 • 70 citations

Elastoresistance in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi></mml:math>-Type Ge and Si

1954 • 43 citations

Weak-Field Magnetoresistance in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type Aluminum Antimonide

1966 • 41 citations

Carrier Mobilities in InP, GaAs, and AlSb†

1958 • 39 citations

Scattering Anisotropies in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type Silicon

1960 • 29 citations

Intervalley scattering by donor ions in germanium

1964 • 28 citations

Effect of Stress on the Electrical Properties of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type Gallium Arsenide

1965 • 25 citations

The infra-red Faraday effect in n-type AlSb and GaP and in undoped GaP

1964 • 24 citations

Elastogalvanomagnetic Effect and Intervalley Scattering in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type Germanium

1956 • 19 citations

Fine structure in the Hall coefficient

1959 • 13 citations

Piezoresistance in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi></mml:math>-Type Gallium Antimonide

1964 • 13 citations