Quantitative analysis of the effects of steady-state illumination on the MOS-capacitor—I

Statistics of the Recombinations of Holes and Electrons

1952 • 6,023 citations

The Si-SiO₂Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique

1967 • 1,765 citations

Fine Structure in the Absorption-Edge Spectrum of Si

1958 • 599 citations

Optical Constants of Silicon in the Region 1 to 10 ev

1960 • 556 citations

Surface effects on p-n junctions: Characteristics of surface space-charge regions under non-equilibrium conditions

1966 • 434 citations

Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structures

1965 • 416 citations

Redistribution of Acceptor and Donor Impurities during Thermal Oxidation of Silicon

1964 • 330 citations

Physical limitations on the frequency response of a semiconductor surface inversion layer

1965 • 144 citations

Lateral AC current flow model for metal-insulator-semiconductor capacitors

1965 • 135 citations

Impedance of semiconductor-insulator-metal capacitors

1964 • 129 citations

The equivalent circuit model in solid-state electronics—Part I: The single energy level defect centers

1967 • 121 citations

Simple Physical Model for the Space-Charge Capacitance of Metal-Oxide-Semiconductor Structures

1964 • 77 citations

Influence of illumination on MIS capacitances in the strong inversion region

1967 • 73 citations

Theory of the small-signal photovoltage at semiconductor surfaces

1967 • 62 citations

固体エレクトロニックスにおける等価回路モデル I 単一エネルギー準位の欠陥中心の場合

1967 • 53 citations

Charges on Oxidized Silicon Surfaces

1963 • 42 citations

A bibliography of metal-insulator-semiconductor studies

1967 • 40 citations

Quantitative analysis of the effects of steady-state illumination on the MOS-capacitor—II

1970 • 18 citations

Equivalent circuit of a metal-insulator-semiconductor structure

1967 • 3 citations